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HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet APRIL 2002
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT's are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341.
Features
* >100kHz Operation At 390V, 20A * 200kHz Operation At 390V, 12A * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T J = 125 oC * Low Conduction Loss * Temperature Compensating SABERTM Model www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG20N60A4D HGT4E20N60A4DS PACKAGE TO-247 TO-268 BRAND 20N60A4D 20N60A4DS TO-268AA
NOTE: When ordering, use the entire part number.
Symbol
C C G G E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG20N60A4D, HGT4E20N60A4DS 600 70 40 280 20 30 100A at 600V 290 2.32 -55 to 150 260 UNITS V A A A V V W W/oC oC oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 100 IGBT and Diode at TJ = 125oC, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 115 510 330 MAX 250 3.0 2.7 2.0 7.0 250 162 210 350 200 21 18 135 73 600 500 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J J ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 20A, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP Qg(ON)
IC = 250A, VCE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 100H, VCE = 600V IC = 20A, VCE = 300V IC = 20A, VCE = 300V VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode at TJ = 25oC, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Electrical Specifications
PARAMETER Diode Forward Voltage Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL VEC trr TEST CONDITIONS IEC = 20A IEC = 20A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. MIN TYP 2.3 35 26 MAX 0.43 1.9 UNITS V ns ns
oC/W oC/W
Typical Performance Curves
100 ICE , DC COLLECTOR CURRENT (A) DIE CAPABILITY 80 PACKAGE LIMIT
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 120 100 80 60 40 20 0
VGE = 15V
TJ = 150oC, RG = 3, VGE = 15V, L = 100H
60
40
20
0 25
50
75
100
125
150
0
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
fMAX, OPERATING FREQUENCY (kHz)
TC 75oC 300
VGE 15V
VCE = 390V, RG = 3, TJ = 125oC ISC
12 10 8 6 4 2 0
400 350 300 250 200 150 100 15
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43oC/W, SEE NOTES TJ = 125oC, RG = 3, L = 500H, V CE = 390V 40 5 10 20 30 40 50
tSC
10
11
12
13
14
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
ISC, PEAK SHORT CIRCUIT CURRENT (A)
500
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
14
450
HGTG20N60A4D, HGT4E20N60A4DS Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
100 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 80
80
60
60
40
TJ = 125oC TJ = 150oC TJ = 25 oC
40 TJ = 125oC 20 TJ = 150oC TJ = 25oC
20
0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400 EOFF, TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) RG = 3, L = 500H, VCE = 390V 1200 1000 800 600 400 200 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 40 TJ = 125oC, VGE = 12V, VGE = 15V
800 RG = 3, L = 500H, VCE = 390V 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V TJ = 125oC, VGE = 12V OR 15V
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
22 td(ON)I, TURN-ON DELAY TIME (ns) RG = 3, L = 500H, VCE = 390V 20 18 16 14 12 10 8 TJ = 25oC, TJ = 125oC, VGE = 15V
36 RG = 3 L = 500H, VCE = 390V , 32 TJ = 25 oC, TJ = 125oC, VGE = 12V trI , RISE TIME (ns) 28 24 20 16 12 8 4 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 10 15 TJ = 25oC OR TJ = 125oC, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 12V
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS Typical Performance Curves
120 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 500H, VCE = 390V 110 100 90 80 VGE = 12V, VGE = 15V, TJ = 25 oC 70 60 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 125oC 72 64 56 48 40 32 24 5 10 15 20 25 30 35 40 16 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V TJ = 125oC, VGE = 12V OR 15V
Unless Otherwise Specified (Continued)
80 RG = 3, L = 500H, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
16
200 160 120
DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s
VGE, GATE TO EMITTER VOLTAGE (V)
240
o IIG(REF)= 1mA, RL = 15, TJ = 25 oC G(REF) = 1mA, R L = 15, TJ = 25 C
14 12 10 8 6 4 2 0 VCE = 200V VCE = 600V VCE = 400V
TJ = 25 oC 80 40 0 6 TJ = 125oC TJ = -55oC
7
8
9
10
11
12
0
20
40
60
80
100
120
140
160
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 I CE = 20A I CE = 30A RG = 3, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
TJ = 125oC, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10
ICE = 30A 1 ICE = 20A ICE = 10A
I CE = 10A
0.1 3 10 100 RG, GATE RESISTANCE () 1000
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS Typical Performance Curves
5 FREQUENCY = 1MHz 4 C, CAPACITANCE (nF)
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.2
DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s
2.1
3 CIES 2
2.0 ICE = 30A 1.9 ICE = 20A
1 CRES 0 0
COES
1.8
ICE = 10A
20
40
60
80
100
1.7
8
9
10
11
12
13
14
15
16
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE
30 IEC , FORWARD CURRENT (A) DUTY CYCLE < 0.5%, PULSE DURATION = 250s trr , RECOVERY TIMES (ns) 25 20 125oC 15 25oC 10 5 0
90 80 70 60 50 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 4 8 12 16 25oC trr 25oC ta 25 oC tb 20 125 oC tb dIEC/dt = 200A/s 125 oC trr
125oC ta
VEC , FORWARD VOLTAGE (V)
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
50
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
IEC = 20A, VCE = 390V
Qrr, REVERSE RECOVERY CHARGE (nC)
800 VCE = 390V 125oC, IEC = 20A 600 125oC, I EC = 10A 400 25 oC, IEC = 20A 200 25 oC, IEC = 10A 0 200 300 400 500 600 700 800 900 1000
trr, RECOVERY TIMES (ns)
40
125oC ta
30 125 oC tb 20 25oC ta
10
25 oC tb
0 200
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
10 0 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10 -4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10 -2 10 -1 PD t2 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D DIODE TA49372 90% VGE L = 500H VCE RG = 3 DUT + ICE VDD = 390V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
-
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and E OFF are defined in the switching waveforms shown in Figure 25. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series
SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5

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